Ti/Pd/Ag Contacts to n-Type GaAs for High Current Density Devices

The metallization stack Ti/Pd/Ag on n-type Si has been readily used in solar cells due to its low metal/semiconductor specific contact resistance, very high sheet conductance, bondability, long-term durability, and cost-effectiveness. In this study, the use of Ti/Pd/Ag metallization on n-type GaAs is examined, targeting electronic devices that need to handle high current densities and with grid-like contacts with limited surface coverage (i.e., solar cells, lasers, or light emitting diodes). Ti/Pd/Ag (50 nm/50 nm/1000 nm) metal layers were deposited on n-type GaAs by electron beam evaporation and the contact quality was assessed for different doping levels (from 1.3 × 1018 cm−3 to 1.6 × 1019 cm−3) and annealing temperatures (from 300°C to 750°C). The metal/semiconductor specific contact resistance, metal resistivity, and the morphology of the contacts were studied. The results show that samples doped in the range of 1018 cm−3 had Schottky-like I–V characteristics and only samples doped 1.6 × 1019 cm−3 exhibited ohmic behavior even before annealing. For the ohmic contacts, increasing annealing temperature causes a decrease in the specific contact resistance (ρ c,Ti/Pd/Ag ~ 5 × 10−4 Ω cm2). In regard to the metal resistivity, Ti/Pd/Ag metallization presents a very good metal conductivity for samples treated below 500°C (ρ M,Ti/Pd/Ag ~ 2.3 × 10−6 Ω cm); however, for samples treated at 750°C, metal resistivity is strongly degraded due to morphological degradation and contamination in the silver overlayer. As compared to the classic AuGe/Ni/Au metal system, the Ti/Pd/Ag system shows higher metal/semiconductor specific contact resistance and one order of magnitude lower metal resistivity

Numerical Simulation of III-V Solar Cells Using D-AMPS

Numerical simulation of devices plays a crucial role in their design, performance prediction, and comprehension of the fundamental phenomena ruling their operation. Here, we present results obtained using the code D-AMPS-1D, that was conveniently modified to consider the particularities of III-V solar cell devices. This work, that is a continuation of a previous paper regarding solar cells for space applications, is focused on solar cells structures than find application for terrestrial use under concentrated solar illumination. The devices were fabricated at the Solar Energy Institute of the Technical University of Madrid (UPM). The first simulations results on InGaP cells are presented. The influence of band offsets and band bending at the window-emitter interface on the quantum efficiency was studied. A remarkable match of the experimental quantum efficiency was obtained. Finally, numerical simulation of single junction n-p InGaP-Ge solar cells was performed

Optical Transmittance Maximization in Superior Performance Tunnel Junctions for Very High Concentration Applications.

The light transmission through a tunnel junction in a multijunction solar cell depends on the optical properties and thickness of the whole solar cell layers stack, which configure the light absorption, reflection and interference processes taking place inside the semiconductor structure. In this paper the focus is put on the AlGaAs barrier layers of p++AlGaAs/n++GaAs and p++AlGaAs/n++GaInP tunnel junctions inserted into a GaInP/GaAs dualjunction solar cell. The aim is to analyze the effect of the thickness and Al-composition of these barrier layers on the light transmittance of the tunnel junction, using the bottom cell Jsc as the merit figure to appraise it. An intricate relation between this Jsc and the barrier layers parameters, caused by interferential reflectance, was observed. The importance of an appropriate optical design of the semiconductor structure was corroborated by a non-negligible gain in the bottom cell Jsc when choosing the appropriate barrier layers Al-compositions and thicknesses from a range of practical values for which the optical absorption is not the main contributor to the optical losses

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects

Optical in situ calibration of Sb to grow disordered GaInP by MOVPE

Reflectance anisotropy spectroscopy (RAS) was employed to determine the optimal specific molar flow of Sb needed to grow GaInP with a given order parameter by MOVPE. The RAS signature of GaInP surfaces exposed to different Sb/P molar flow ratios were recorded, and the RAS peak at 3.02 eV provided a feature that was sensitive to the amount of Sb on the surface. The range of Sb/P ratios over which Sb acts as a surfactant was determined using the RA intensity of this peak, and different GaInP layers were grown using different Sb/P ratios. The order parameter of the resulting layers was measured by PL at 20 K. This procedure may be extensible to the calibration of surfactant-mediated growth of other materials exhibiting characteristic RAS signatures

Analysis of Chromatic Aberration Effects in Triple-Junction Solar Cells Using Advanced Distributed Models

The consideration of real operating conditions for the design and optimization of a multijunction solar cell receiver-concentrator assembly is indispensable. Such a requirement involves the need for suitable modeling and simulation tools in order to complement the experimental work and circumvent its well-known burdens and restrictions. Three-dimensional distributed models have been demonstrated in the past to be a powerful choice for the analysis of distributed phenomena in single- and dual-junction solar cells, as well as for the design of strategies to minimize the solar cell losses when operating under high concentrations. In this paper, we present the application of these models for the analysis of triple-junction solar cells under real operating conditions. The impact of different chromatic aberration profiles on the short-circuit current of triple-junction solar cells is analyzed in detail using the developed distributed model. Current spreading conditions the impact of a given chromatic aberration profile on the solar cell I-V curve. The focus is put on determining the role of current spreading in the connection between photocurrent profile, subcell voltage and current, and semiconductor layers sheet resistance

Assessment of rear-surface processing strategies for III-V on Si multijunction solar cells based on numerical simulations

The manufacturing of high-efficiency III-V on Si multijunction solar cells needs the development of hybrid, i.e., adapted to both families of materials, solar cell processing techniques, able to extract the full photovoltaic potential of both the subcells. This fact especially impacts the processing of the silicon rear surface of the tandem, which cannot receive treatments commonly used in the single-junction Si solar cell industry [Al-back surface field (BSF), thermal SiO2, and so on], since these would result in an excessive thermal load that would deteriorate the III-V upper layers (top cell, tunnel junction, and buffer layer). However, the Si bottom cell requires an advanced design with good rear passivation, a good ohmic contact, and good carrier selectivity, so that its contribution to the efficiency of the tandem is maximized. Accordingly, in this paper, several low-temperature compatible rear-surface passivation techniques for the Si bottom subcell in a monolithic III-V/Si tandem solar cell are explored. In particular, aluminum BSFs, passivated emitter and rear cell (PERC)-like architecture, passivated emitter and rear locally diffused (PERL)-like architecture formed with low thermal loads, and heterojunction with intrinsic thin layer (HIT)-like processes are assessed using numerical simulations, and a comparison of the Si bottom cell performance for the mentioned alternatives in a GaAsP/Si dual-junction solar cell is presented

Distributed Simulation of Real Tunnel Junction Effects in Multi-Junction Solar Cells

In this paper, we present an improved 3D distributed model that considers real operation regimes in a tunnel junction. This advanced method is able to accurately simulate the high concentrations at which the current in the solar cell surpasses the peak current of the tunnel junction. Simulations of dual-junction solar cells were carried out with different light profiles and including chromatic aberration to show the capabilities of the model. Such simulations show that, under some circumstances, the solar cell short circuit current may be slightly higher than the tunnel junction peak current without showing the characteristic dip in the J-V curve. This behavior is caused by the lateral current spreading towards the dark regions, which occurs through the anode region of the tunnel junction

Implications of low breakdown voltage of component subcells on external quantum efficiency measurements of multijunction solar cells

The electrical and optical coupling between subcells in a multijunction solar cell affects its external quantum efficiency (EQE) measurement. In this study, we show how a low breakdown voltage of a component subcell impacts the EQE determination of a multijunction solar cell and demands the use of a finely adjusted external voltage bias. The optimum voltage bias for the EQE measurement of a Ge subcell in two different GaInP/GaInAs/Ge triple-junction solar cells is determined both by sweeping the external voltage bias and by tracing the I–V curve under the same light bias conditions applied during the EQE measurement. It is shown that the I–V curve gives rapid and valuable information about the adequate light and voltage bias needed, and also helps to detect problems associated with non-ideal I–V curves that might affect the EQE measurement. The results also show that, if a non-optimum voltage bias is applied, a measurement artifact can result. Only when the problems associated with a non-ideal I–V curve and/or a low breakdown voltage have been discarded, the measurement artifacts, if any, can be attributed to other effects such as luminescent coupling between subcells

Reliability evaluation of III-V concentrator solar cells

Concentrator solar cells have been proposed as an interesting way of reducing the cost of photovoltaic electricity. However, in order to compete with conventional solar modules it is necessary not only to reduce costs but also to evaluate and increase the present reliability. Concentrator solar cells work at higher temperature, solar radiation and current stress than conventional solar cells and a carefully reliability analysis is needed. In this paper a reliability analysis procedure, that is being developed, is presented